Title:
HIGH PERFORMANCE POLYCRYSTALLINE TRANSISTORS
Document Type and Number:
WIPO Patent Application WO2004109767
Kind Code:
A3
Abstract:
The invention teaches new uses for a class of polycrystalline semiconductors and highly defected semiconductors, particularly in the channel region (407) of a thin-film field-effect transistor (TFT) using a confinement region (405) to increase the mobility of the charges carriers in the channel region. The invention also discloses methods used to design and fabricate high performance electronic devices using semiconductors from said class.
Inventors:
HARMON ERIC S (US)
SALZMAN DAVID B (US)
WOODALL JERRY M (US)
HYLAND JAMES T (US)
KOUDELKA ROBERT
SALZMAN DAVID B (US)
WOODALL JERRY M (US)
HYLAND JAMES T (US)
KOUDELKA ROBERT
Application Number:
PCT/US2004/018220
Publication Date:
February 02, 2006
Filing Date:
June 02, 2004
Export Citation:
Assignee:
UNIV YALE (US)
HARMON ERIC S (US)
SALZMAN DAVID B (US)
WOODALL JERRY M (US)
HYLAND JAMES T (US)
KOUDELKA ROBERT
HARMON ERIC S (US)
SALZMAN DAVID B (US)
WOODALL JERRY M (US)
HYLAND JAMES T (US)
KOUDELKA ROBERT
International Classes:
H01L; (IPC1-7): H01L27/12; H01L21/265; H01L21/84; H01L29/04; H01L29/80; H01L31/036; H01L31/30; H01L31/36
Foreign References:
| US5298441A | 1994-03-29 | |||
| US4727403A | 1988-02-23 | |||
| US5461250A | 1995-10-24 | |||
| US20020074548A1 | 2002-06-20 |
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