Title:
HIGH QUALITY SILICON WAFER AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2001/083860
Kind Code:
A1
Abstract:
A silicon wafer which has FPD deffects on its surface except a perimetrical portion of 10 mm width in a density of 20 to 300 pieces/cm?2¿; and a method for producing a silicon wafer by the CZ method, characterized in that a silicon wafer is grown under conditions such that, in the central portion of the crystal, a value of (F/Gc)/ $m(r) (L/F) ranges from 0.014 to 0.035 mm?2¿/K • min?0.5¿ wherein Gc represents a temperature gradient (K / mm) in the direction of the axis of pulling up in the temperature range from the melting point of silicon to 1400 °, L (mm) represents a length of the crystal being grown in the temperature range from 1150 ° to 1080 °, F represents a rate (ml/min) of crystal growth, and, in the above-mentioned perimetrical portion of 10 mm width, a value of F / Ge is 0.22 mm?2¿/K • min or more wherein Ge represents a temperature gradient (K / mm) in the temperature range from the melting point of silicon to 1400 ° and F represents a rate (ml / min) of crystal growth.
More Like This:
Inventors:
HOSHI RYOJI (JP)
FUSEGAWA IZUMI (JP)
YANAGIMACHI TAKAHIRO (JP)
OHTA TOMOHIKO (JP)
FUSEGAWA IZUMI (JP)
YANAGIMACHI TAKAHIRO (JP)
OHTA TOMOHIKO (JP)
Application Number:
PCT/JP2001/003580
Publication Date:
November 08, 2001
Filing Date:
April 25, 2001
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
HOSHI RYOJI (JP)
FUSEGAWA IZUMI (JP)
YANAGIMACHI TAKAHIRO (JP)
OHTA TOMOHIKO (JP)
HOSHI RYOJI (JP)
FUSEGAWA IZUMI (JP)
YANAGIMACHI TAKAHIRO (JP)
OHTA TOMOHIKO (JP)
International Classes:
C30B15/00; (IPC1-7): C30B29/06; H01L21/322
Foreign References:
| JPH1179889A | 1999-03-23 | |||
| JPH11116391A | 1999-04-27 |
Attorney, Agent or Firm:
Yoshimiya, Mikio (Motoasakusa 2-chome Taito-ku, Tokyo, JP)
Download PDF: