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Patent Searching and Data


Title:
HIGH-VOLTAGE INTEGRATED CIRCUIT AND CONTROL METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/168825
Kind Code:
A1
Abstract:
The present invention belongs to the technical field of semiconductors. Disclosed is a high-voltage integrated circuit. A rising-edge output end of a first single-pulse GEN is electrically connected to an input end of a first OR gate, and a falling-edge output end of the first single-pulse GEN is electrically connected to an input end of a second OR gate; a clear pin of a shift register is electrically connected to a clear signal output end of an MCU processor, and a clock pin of the shift register is electrically connected to a PWM output end of the MCU processor; and an output end of the shift register is electrically connected to an input end of a second single-pulse GEN, a rising-edge output end of the second single-pulse GEN is electrically connected to the input end of the first OR gate, and a falling-edge output end of the second single-pulse GEN is electrically connected to the input end of the second OR gate. Further disclosed is a control method for a high-voltage integrated circuit. By means of the high-voltage integrated circuit and the control method therefor, the problem of a control signal which is generated by an RS trigger being inaccurate is solved.

Inventors:
FENG YUXIANG (CN)
LI BIN (CN)
XIE RONGCAI (CN)
Application Number:
PCT/CN2022/092908
Publication Date:
September 14, 2023
Filing Date:
May 16, 2022
Export Citation:
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Assignee:
UNIV SOUTH CHINA TECH (CN)
International Classes:
H03K7/08; H03K17/567; H03K17/687
Foreign References:
CN114337628A2022-04-12
CN113949370A2022-01-18
CN113949250A2022-01-18
CN113922638A2022-01-11
US20070210780A12007-09-13
Attorney, Agent or Firm:
BEIJING GAOWO LAW FIRM (CN)
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