Title:
HIGH-VOLTAGE LIGHT EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2016/011809
Kind Code:
A1
Abstract:
Discloses are a high-voltage light emitting diode and a manufacturing method therefor. A liquid insulation material layer/liquid conducting material layer is introduced and then solidified for insulation or bridging, and the widths of isolation grooves between light emitting units can be ultra small (the widths of openings are smaller than or equal to 0.3 μm), so that the single chip output is increased, the area of an effective light emitting region is expanded, and the light emitting efficiency is improved; the problem that a traditional high-voltage light emitting diode metal wire is prone to breakage when striding over a channel with a large fall is solved, and the serial/parallel bridging defect-free rate is increased; in addition, the manufacturing method can be implemented at a chip manufacturing end, and manufacturing cost is low.
More Like This:
| JPS528795 | SELECTIVE INDICATION CIRCUIT |
| JPS60235479 | LIGHT-EMITTING ELEMENT ARRAY |
| JP2962639 | [Title of Invention] Semiconductor light emitting device |
Inventors:
WU HOU-JUN (CN)
ZHENG JIANSEN (CN)
HSU CHEN-KE (CN)
HE ANHE (CN)
LEE CHIA-EN (CN)
ZHENG JIANSEN (CN)
HSU CHEN-KE (CN)
HE ANHE (CN)
LEE CHIA-EN (CN)
Application Number:
PCT/CN2015/073464
Publication Date:
January 28, 2016
Filing Date:
March 02, 2015
Export Citation:
Assignee:
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L33/00; H01L33/48; H01L33/62
Foreign References:
| CN104091867A | 2014-10-08 | |||
| CN102938436A | 2013-02-20 | |||
| DE102010023342A1 | 2011-12-15 | |||
| CN103219476A | 2013-07-24 |
Download PDF: