Title:
HIGH-VOLTAGE-RESISTANCE AND LOW-ON-RESISTANCE IGZO THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/078637
Kind Code:
A1
Abstract:
Provided in the present invention are a high-voltage-resistance and low-on-resistance IGZO thin-film transistor and a preparation method therefor. Hydrogen ion doping is performed on an IGZO low-resistance drift region of a device, such that the concentration of carriers in the IGZO low-resistance drift region is increased, the on-resistance of an IGZO channel is reduced, and the current density, which is sacrificed due to the increase in the voltage resistance of the device by a non-gate-control drift region, is significantly reduced, thereby obtaining a better relationship between the on-resistance and a breakdown voltage. Moreover, compared with conventional processes such as arsenic ion doping and a double-gate structure, the present invention reduces an experimental temperature, simplifies the process steps, and greatly improves the current capacity of a drift region.
Inventors:
WU WANGRAN (CN)
YANG GUANGAN (CN)
HUANG TINGRUI (CN)
YU ZUOXU (CN)
SUN WEIFENG (CN)
SHI LONGXING (CN)
YANG GUANGAN (CN)
HUANG TINGRUI (CN)
YU ZUOXU (CN)
SUN WEIFENG (CN)
SHI LONGXING (CN)
Application Number:
PCT/CN2023/126145
Publication Date:
April 18, 2024
Filing Date:
October 24, 2023
Export Citation:
Assignee:
SOUTHEAST UNIV (CN)
International Classes:
H01L29/786; H01L21/336; H01L29/24; H01L29/36
Attorney, Agent or Firm:
NANJING ZONGHENG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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