Title:
HYBRID-IMAGING DETECTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2021/233278
Kind Code:
A1
Abstract:
Disclosed in the present invention is a hybrid-imaging detector structure, comprising: a visible light sensor and an infrared sensor which are vertically stacked. Light is first incident to the visible light sensor, and then incident to the infrared sensor after absorption and filtering; the visible light sensor forms a cover structure to vacuum-seal the infrared sensor on a substrate of a single chip. According to the present invention, a conventional CMOS-MEMS microbridge resonator structure is used for mid- and far-infrared detection, and a cover having a pn junction or a metal semiconductor contact barrier device is used for implementing vacuum packaging and visible light detection, thereby implementing image fusion, by a single chip, of low-cost, high-quality, and phase-free visible light and mid- and far-infrared images.
Inventors:
KANG XIAOXU (CN)
ZHONG XIAOLAN (CN)
ZHONG XIAOLAN (CN)
Application Number:
PCT/CN2021/094314
Publication Date:
November 25, 2021
Filing Date:
May 18, 2021
Export Citation:
Assignee:
SHANGHAI IC R&D CT CO LTD (CN)
International Classes:
B81B7/02; H01L27/146; H01L31/102
Foreign References:
| CN111584530A | 2020-08-25 | |||
| US20060043297A1 | 2006-03-02 | |||
| CN101262001A | 2008-09-10 | |||
| CN108369951A | 2018-08-03 | |||
| CN102007607A | 2011-04-06 | |||
| CN110120398A | 2019-08-13 | |||
| CN104517977A | 2015-04-15 | |||
| CN105161507A | 2015-12-16 |
Attorney, Agent or Firm:
SHANGHAI IFUTURE INTELLECTUAL PROPERTY LAW FIRM (CN)
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