Title:
HYDRIDE ENHANCED GROWTH RATES IN HYDRIDE VAPOR PHASE EPITAXY
Document Type and Number:
WIPO Patent Application WO/2019/140445
Kind Code:
A3
Abstract:
Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).
Inventors:
SCHULTE KEVIN LOUIS (US)
PTAK AARON JOSEPH (US)
SIMON JOHN DAVID (US)
PTAK AARON JOSEPH (US)
SIMON JOHN DAVID (US)
Application Number:
PCT/US2019/013669
Publication Date:
September 19, 2019
Filing Date:
January 15, 2019
Export Citation:
Assignee:
ALLIANCE SUSTAINABLE ENERGY (US)
International Classes:
B01J10/00; C30B25/14; H01B1/06
Foreign References:
| US20100164070A1 | 2010-07-01 | |||
| US20150325430A1 | 2015-11-12 | |||
| US20160268129A1 | 2016-09-15 |
Other References:
AMY BEAUDET, HOW DO I READ THE SOLAR PANEL SPECIFICATIONS?, 13 April 2016 (2016-04-13), XP055642969, Retrieved from the Internet [retrieved on 20190510]
"Solar cell efficiency", WIKIPEDIA, 22 July 2017 (2017-07-22), XP055642970, Retrieved from the Internet [retrieved on 20190510]
KING ET AL.: "Advances in High-Efficiency III-V Multijunction Solar Cells", ADVNCES IN OPTOELECTRONICS, vol. 2007, pages 1 - 9, XP055642972, Retrieved from the Internet [retrieved on 20190510]
CASTALDINI ET AL.: "The EL2 trap in highly doped GaAs:Te", JOURNAL OF APPLIED PHYSICS, vol. 78, no. 11, 1 December 1995 (1995-12-01), pages 6592 - 6595, XP055642975
"Solar cell efficiency", WIKIPEDIA, 22 July 2017 (2017-07-22), XP055642970, Retrieved from the Internet
KING ET AL.: "Advances in High-Efficiency III-V Multijunction Solar Cells", ADVNCES IN OPTOELECTRONICS, vol. 2007, pages 1 - 9, XP055642972, Retrieved from the Internet
CASTALDINI ET AL.: "The EL2 trap in highly doped GaAs:Te", JOURNAL OF APPLIED PHYSICS, vol. 78, no. 11, 1 December 1995 (1995-12-01), pages 6592 - 6595, XP055642975
Attorney, Agent or Firm:
BARKLEY, Sam J. (US)
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