Title:
IGBT DEVICE MANUFACTURING METHOD AND IGBT DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/051282
Kind Code:
A1
Abstract:
Embodiments of the present application provide an IGBT device manufacturing method and an IGBT device. The manufacturing method comprises: forming an epitaxial layer of a second doping type on a substrate; trenching the upper surface of the epitaxial layer downwards to form pillar region trenches; filling the pillar region trenches with a material of a first doping type; trenching to form first gate trenches, wherein the first gate trenches extend downwards from the upper surface of the material of the first doping type, and the regions of the material of the first doping type which are not trenched serve as pillar regions; forming a first gate oxide layer in the first gate trenches; forming first gates on the first gate oxide layer; and forming a well region of the first doping type in the upper part of the epitaxial layer, wherein the bottom of the well region is higher than the tops of the pillar regions, the part of the epitaxial layer located below the well region serves as a drift region, and the well region and the pillar regions are separated by the drift region and the first gate oxide layer. The embodiments of the present application solve the technical problem that conventional IGBT device manufacturing methods have complex processes and high manufacturing costs.
Inventors:
LIU QIAN (CN)
QI JINWEI (CN)
QI JINWEI (CN)
Application Number:
PCT/CN2023/102560
Publication Date:
March 14, 2024
Filing Date:
June 27, 2023
Export Citation:
Assignee:
SUZHOU WATECH ELECTRONICS CO LTD (CN)
International Classes:
H01L21/331
Foreign References:
| CN113690293A | 2021-11-23 | |||
| CN113497132A | 2021-10-12 | |||
| CN105244369A | 2016-01-13 | |||
| CN112530867A | 2021-03-19 | |||
| CN113140463A | 2021-07-20 | |||
| US20090212321A1 | 2009-08-27 |
Attorney, Agent or Firm:
IPFUTURE INTELLECTUAL PROPERTY OFFICE (CN)
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