Title:
IGBT DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/102756
Kind Code:
A1
Abstract:
An IGBT device, comprising: a p-type body region (22) located at the top of an n-type drift region (21); a first n-type emitter region (23) located in the p-type body region (22); a first gate structure located above the p-type body region (22), the first gate structure comprising a first gate dielectric layer (24), and a first gate (26) and an n-type floating gate (25) located above the first gate dielectric layer (24), and in a transverse direction, the n-type floating gate (25) being located at the side proximate to the n-type drift region (21), and the first gate (26) being located at the side proximate to the first n-type emitter region (23) and extending to above the n-type floating gate (25); an insulating dielectric layer (27) between the n-type floating gate (25) and the first gate (26); and an opening (28) located in the first gate dielectric layer (24), the n-type floating gate (25) being in contact with the p-type body region (22) by means of the opening (28) to form a p-n junction diode.
Inventors:
GONG YI (CN)
WANG RUI (CN)
LIU WEI (CN)
YUAN YUANLIN (CN)
WANG XIN (CN)
WANG RUI (CN)
LIU WEI (CN)
YUAN YUANLIN (CN)
WANG XIN (CN)
Application Number:
PCT/CN2019/121349
Publication Date:
June 03, 2021
Filing Date:
November 27, 2019
Export Citation:
Assignee:
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/78
Foreign References:
| JP2006344779A | 2006-12-21 | |||
| US20140299914A1 | 2014-10-09 | |||
| JP5366521B2 | 2013-12-11 |
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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