III NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTRATE, AND SEMICONDUCTOR DEVICE

Title:

III NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTRATE, AND SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2011/040108

Kind Code:

A1

Abstract:

In a semiconductor device (100), a surface layer (12) contains a sulfide at a density of 30×1010 to 2000×1010 particles/cm2 in terms of S content and an oxide at a concentration of 2 to 20 at% in terms of O content. In the semiconductor device (100), the occurrence of pile-up of C in the interface between an epitaxial layer (22) and a III nitride semiconductor substrate (10) can be prevented. In this manner, by preventing the occurrence of pile-up of C, the formation of a high-resistance layer in the interface between an epitaxial layer (22) and a III nitride semiconductor substrate (10) can be prevented. Thus, the electrical resistance in the interface between the epitaxial layer (22) and the III nitride semiconductor substrate (10) can be reduced, and the crystal quality of the epitaxial layer (22) can be improved. Consequently, the luminous intensity and the yield of the semiconductor device (100) can be improved.

Inventors:

ISHIBASHI KEIJI (JP)

Application Number:

PCT/JP2010/061910

Publication Date:

April 07, 2011

Filing Date:

July 14, 2010

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES (JP)
ISHIBASHI KEIJI (JP)

International Classes:

C30B29/38; C23C16/34; C30B29/40; H01L21/205; H01L33/32

Foreign References:

JP4333820B1	2009-09-16
US6596079B1	2003-07-22
US6488767B1	2002-12-03
US3183335A	1965-05-11

Other References: