Title:
IMAGE SENSORS WITH SHIELDED ELECTRONICS LAYERS
Document Type and Number:
WIPO Patent Application WO/2023/087123
Kind Code:
A1
Abstract:
An imaging system(500), comprising an image sensor(510) which comprises: a stack of M radiation detectors(100) each of which comprises (A) a radiation absorption layer(110) and (B) an electronics layer(120) configured to process electrical signals generated in the radiation absorption layer(110), M being an integer greater than 1; and M collimator regions(515) respectively for the M electronics layers(120) of the M radiation detectors(100), wherein there is a reference straight line(519) for the image sensor(510) such that for each electronics layer(120) of the M electronics layers(120), every straight line(519) intersecting said each electronics layer(120) and being parallel to the reference straight line(519) intersects the corresponding collimator region(515), and wherein for each radiation absorption layer(110) of the M radiation absorption layers(110), every straight line(519) intersecting said each radiation absorption layer(110) and being parallel to the reference straight line(519) does not intersect any collimator region of the M collimator regions(515).
Inventors:
CAO PEIYAN (CN)
LIU YURUN (CN)
LIU YURUN (CN)
Application Number:
PCT/CN2021/130782
Publication Date:
May 25, 2023
Filing Date:
November 16, 2021
Export Citation:
Assignee:
SHENZHEN XPECTVISION TECH CO LTD (CN)
International Classes:
G01T1/29
Foreign References:
| CN101542315A | 2009-09-23 | |||
| US20090225938A1 | 2009-09-10 | |||
| CN110603464A | 2019-12-20 | |||
| CN110291423A | 2019-09-27 | |||
| CN108351425A | 2018-07-31 | |||
| CN108697398A | 2018-10-23 | |||
| CN110398769A | 2019-11-01 |
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