Title:
IMPROVED SEMICONDUCTOR ETCHING PROCESS CONTROL
Document Type and Number:
WIPO Patent Application WO2003081293
Kind Code:
B1
Abstract:
The thickness of a silicon wafer (3) within a processing vacuum enclosure (1) is measured or monitored by an optical apparatus (50) via a window (4). The optical apparatus (5) comprises a laser which is tuneable across a range of wavelengths while maintaining a narrow bandwidth. The optical apparatus (5) also includes a detector receiving reflected light. The wavelength variation produces interference effects which are used, by examination of the detector output, to give a measure of thickness or other parameters.
Inventors:
BOGER MICHAEL STEPHEN (US)
HOLBROOK MARK BURTON (GB)
HEASON DAVID (GB)
L HOSTIS FLORIAN (NZ)
REEVE DAVID ROBERT (AU)
HOLBROOK MARK BURTON (GB)
HEASON DAVID (GB)
L HOSTIS FLORIAN (NZ)
REEVE DAVID ROBERT (AU)
Application Number:
PCT/US2003/008389
Publication Date:
April 29, 2004
Filing Date:
March 18, 2003
Export Citation:
Assignee:
BOC GROUP INC (US)
BOGER MICHAEL STEPHEN (US)
HOLBROOK MARK BURTON (GB)
HEASON DAVID (GB)
L HOSTIS FLORIAN (NZ)
REEVE DAVID ROBERT (AU)
BOGER MICHAEL STEPHEN (US)
HOLBROOK MARK BURTON (GB)
HEASON DAVID (GB)
L HOSTIS FLORIAN (NZ)
REEVE DAVID ROBERT (AU)
International Classes:
G01B11/06; (IPC1-7): G01B9/02
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