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Title:
IMPURITY DIFFUSION COMPOSITION AND SEMICONDUCTOR ELEMENT PRODUCTION METHOD USING IMPURITY DIFFUSION COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2018/021121
Kind Code:
A1
Abstract:
An impurity diffusion composition according to one embodiment is for diffusing a desired conductive impurity-diffused component into a semiconductor substrate. The impurity diffusion composition contains a polysiloxane (A) and an impurity-diffused component (B). The polysiloxane (A) contains a carboxyl group and/or a dicarboxylic acid anhydride structure. The impurity diffusion composition is for use in a semiconductor element production method and is particularly suitable for use in the production of solar cells.

Inventors:
KITADA TSUYOSHI (JP)
IKEGAMI YOSHIHIRO (JP)
ARAI NANA (JP)
Application Number:
PCT/JP2017/026150
Publication Date:
February 01, 2018
Filing Date:
July 19, 2017
Export Citation:
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Assignee:
TORAY INDUSTRIES (JP)
International Classes:
H01L21/225
Foreign References:
JP2014168026A2014-09-11
JP2002539615A2002-11-19
JP2009238824A2009-10-15
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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