Title:
INDENOFLUORENEDIONE DERIVATIVE, MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENT, AND ORGANIC ELECTROLUMINESCENT ELEMENT
Document Type and Number:
WIPO Patent Application WO/2010/064655
Kind Code:
A1
Abstract:
An indenofluorenedione derivative having a structure represented by formula (I) (wherein Ar1 represents a fused ring having 6-24 nuclear carbon atoms, or the like; ar1 and ar2 represent formula (i) or/and formula (ii); and x1 and x2 each represents one of formulae (a)-(g)) has excellent heat resistance and can be deposited on a substrate at an adequate temperature. Consequently, the indenofluorenedione derivative is useful as a material for an organic electroluminescent element. An organic electroluminescent element, which comprises a positive electrode, a negative electrode, and an organic thin film layer that is arranged between the electrodes and contains the material for an organic electroluminescent element, has a low driving voltage and long life.
Inventors:
MORISHITA HIRONOBU (JP)
KAWAMURA YUICHIRO (JP)
ENDO JUN (JP)
KAWAMURA YUICHIRO (JP)
ENDO JUN (JP)
Application Number:
PCT/JP2009/070243
Publication Date:
June 10, 2010
Filing Date:
December 02, 2009
Export Citation:
Assignee:
IDEMITSU KOSAN CO (JP)
MORISHITA HIRONOBU (JP)
KAWAMURA YUICHIRO (JP)
ENDO JUN (JP)
MORISHITA HIRONOBU (JP)
KAWAMURA YUICHIRO (JP)
ENDO JUN (JP)
International Classes:
C07C255/35; C07C255/37; C07C261/04; C09K11/06; H01L51/50
Domestic Patent References:
| WO2009069717A1 | 2009-06-04 | |||
| WO2009011327A1 | 2009-01-22 |
Foreign References:
| JP2002329582A | 2002-11-15 | |||
| JP2003031365A | 2003-01-31 | |||
| JP2001297883A | 2001-10-26 | |||
| JP2004514257A | 2004-05-13 | |||
| US20050255334A1 | 2005-11-17 | |||
| JP2008244430A | 2008-10-09 | |||
| JP3098330B2 | 2000-10-16 | |||
| JPH08193191A | 1996-07-30 |
Other References:
H.USTA ET AL.: "Synthesis and Characterization of Electron-Deficient and High Soluble (Bis) Indenofluorene Building Blocks for n-Type Semiconducting Polymers", ORGANIC LETTERS, vol. 10, no. 7, 4 March 2008 (2008-03-04), pages 1385 - 1388
H.USTA ET AL.: "Air-Stable, Solution-Processable n-Channel and Ambipolar Semiconductors for Thin- Film Transistors Based on the Indenofluorenebis (dicyanovinylene) Core", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. 130, no. 27, 11 June 2008 (2008-06-11), pages 8580 - 8581
CHEMISCHE BERICHTE, vol. 89, 1956, pages 2799
JOURNAL OF ORGANIC CHEMISTRY, vol. 66, 2001, pages 7666
LIEBIGS ANN. CHEM., 1986, pages 142
See also references of EP 2371812A4
H.USTA ET AL.: "Air-Stable, Solution-Processable n-Channel and Ambipolar Semiconductors for Thin- Film Transistors Based on the Indenofluorenebis (dicyanovinylene) Core", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. 130, no. 27, 11 June 2008 (2008-06-11), pages 8580 - 8581
CHEMISCHE BERICHTE, vol. 89, 1956, pages 2799
JOURNAL OF ORGANIC CHEMISTRY, vol. 66, 2001, pages 7666
LIEBIGS ANN. CHEM., 1986, pages 142
See also references of EP 2371812A4
Attorney, Agent or Firm:
OHTANI, Tamotsu et al. (JP)
Tamotsu Otani (JP)
Tamotsu Otani (JP)
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