Title:
INDIUM TARGET AND PROCESS FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2012/144089
Kind Code:
A1
Abstract:
Provided are: a novel indium target which can satisfactorily minimize the anomalous discharge during sputtering and the occurrence of particles in a formed film; and a process for producing the same. This indium target contains, per gram, up to 1500 inclusions of 0.5 to 20μm in particle diameter.
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Inventors:
ENDO YOUSUKE (JP)
SAKAMOTO MASARU (JP)
SAKAMOTO MASARU (JP)
Application Number:
PCT/JP2011/065587
Publication Date:
October 26, 2012
Filing Date:
July 07, 2011
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
ENDO YOUSUKE (JP)
SAKAMOTO MASARU (JP)
ENDO YOUSUKE (JP)
SAKAMOTO MASARU (JP)
International Classes:
C23C14/34
Foreign References:
JPS6344820B2 | 1988-09-07 | |||
JP2010024474A | 2010-02-04 | |||
JPH0925564A | 1997-01-28 | |||
JPH05214519A | 1993-08-24 |
Attorney, Agent or Firm:
AXIS Patent International (JP)
Axis international patent business corporation (JP)
Axis international patent business corporation (JP)
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