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Title:
INDIVIDUALLY TUNABLE QUANTUM DOTS IN ALL-VAN DER WAALS HETEROSTRUCTURES
Document Type and Number:
WIPO Patent Application WO/2022/055563
Kind Code:
A3
Abstract:
Apparatus, methods, and systems are disclosed for robust scalable topological quantum computing. Quantum dots are fabricated as van der Waals heterostructures, supporting localized topological phases and non-Abelian anyons (quasiparticles). An example device (100) uses a vertical van der Waals heterostructure comprising a bottom dielectric layer (104), and active layer (106) and a top dielectric (110). A quantum dot electrode (114) is disposed on a insulating spacer (112) disposed in an opening in the top electrode layer (110). Suitable van der Waals materials are graphene, hexagonal Boron Nitride and transition metal dichalcogenides (TMD). Large bandgaps provide noise immunity. Three-dot structures include an intermediate quantum dot between two computational quantum dots. With the intermediate quantum dot in an OFF state, quasiparticles at the computational quantum dots can be isolated, with long lifetimes. Alternatively, the intermediate quantum dot can be controlled to decrease the quasiparticle tunneling barrier, enabling fast computing operations. A computationally universal suite of operations includes quasiparticle initialization, braiding, fusion, and readout of fused quasiparticle states, with, optionally, transport or tunable interactions - all topologically protected. Robust qubits can be operated without error correction. Quasilinear arrays of quantum dots or qubits can be scaled arbitrarily, up to resource limits, and large-scale topological quantum computers can be realized. Extensive two-dimensional arrays can also be used.

Inventors:
BONDERSON PARSA (US)
NAYAK CHETAN (US)
REILLY DAVID (US)
YOUNG ANDREA FRANCHINI (US)
ZALETEL MICHAEL (US)
Application Number:
PCT/US2021/032254
Publication Date:
April 21, 2022
Filing Date:
May 13, 2021
Export Citation:
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Assignee:
MICROSOFT TECHNOLOGY LICENSING LLC (US)
International Classes:
H01L29/66; G06N10/40; H01L29/06; H01L29/16; H01L29/26; H01L29/423; H01L29/76; B82Y10/00; H01L29/20; H01L29/22
Domestic Patent References:
WO2019125500A12019-06-27
Foreign References:
US9842921B22017-12-12
Other References:
RICCARDO PISONI ET AL: "Gate-Tunable Quantum Dot in a High Quality Single Layer MoS_mathrm2 Van der Waals Heterostructure", ARXIV.ORG, CORNELL UNIVERSITY LIBRARY, 201 OLIN LIBRARY CORNELL UNIVERSITY ITHACA, NY 14853, 1 January 2018 (2018-01-01), XP081222296, DOI: 10.1063/1.5021113
MARIUS EICH ET AL: "Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots", ARXIV.ORG, CORNELL UNIVERSITY LIBRARY, 201 OLIN LIBRARY CORNELL UNIVERSITY ITHACA, NY 14853, 8 March 2018 (2018-03-08), XP081135170, DOI: 10.1103/PHYSREVX.8.031023
BISCHOFF D ET AL: "Graphene nano-heterostructures for quantum devices", MATERIALS TODAY, ELSEVIER, AMSTERDAM, NL, vol. 19, no. 7, 3 April 2016 (2016-04-03), pages 375 - 381, XP029729371, ISSN: 1369-7021, DOI: 10.1016/J.MATTOD.2016.02.021
WANG KE ET AL: "Electrical control of charged carriers and excitons in atomically thin materials", NATURE NANOTECHNOLOGY, NATURE PUB. GROUP, INC, LONDON, vol. 13, no. 2, 15 January 2018 (2018-01-15), pages 128 - 132, XP036429645, ISSN: 1748-3387, [retrieved on 20180115], DOI: 10.1038/S41565-017-0030-X
LIU XIAOLONG ET AL: "2D materials for quantum information science", NATURE REVIEWS MATERIALS, NATURE PUBLISHING GROUP UK, LONDON, vol. 4, no. 10, 19 August 2019 (2019-08-19), pages 669 - 684, XP036898604, DOI: 10.1038/S41578-019-0136-X
Attorney, Agent or Firm:
CHOI, Daniel et al. (US)
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