Title:
INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/071237
Kind Code:
A1
Abstract:
The present application discloses an insulated gate bipolar transistor (IGBT) and a manufacturing method therefor. In the direction from a first surface to a second surface, the IGBT is provided with a front side device area, an IGBT drift area, an IGBT buffer area and an IGBT collector area which are connected in sequence. The front side device area can comprise a cell area, a field plate area, and a field limiting ring area. The IGBT drift area has first-type doping elements, the IGBT buffer area has first-type doping elements, and the concentration of the first-type doping elements in the IGBT buffer area is greater than the concentration of the first-type doping elements in the IGBT drift area. The IGBT collector area comprises a cell collector area, a field plate collector area and a field limiting ring collector area, and the IGBT collector area has second-type doping elements, and the concentration of second-type doping elements of the cell collector area is greater than the concentration of second-type doping elements of the field plate collector area. Therefore, the amplification factor of a parasitic triode of a field plate area is effectively reduced, the voltage withstanding characteristics and the safe operation area characteristics of the device are improved, and the overall operation performance of the device is improved.
Inventors:
YANG WENTAO (CN)
HU MIAO (CN)
SONG CHAOFAN (CN)
ZHAO QIAN (CN)
HU MIAO (CN)
SONG CHAOFAN (CN)
ZHAO QIAN (CN)
Application Number:
PCT/CN2022/100066
Publication Date:
May 04, 2023
Filing Date:
June 21, 2022
Export Citation:
Assignee:
HUAWEI DIGITAL POWER TECH CO LTD (CN)
International Classes:
H01L29/06; H01L21/331; H01L29/739
Foreign References:
| CN114188396A | 2022-03-15 | |||
| CN104143568A | 2014-11-12 | |||
| CN113097287A | 2021-07-09 | |||
| CN202282353U | 2012-06-20 | |||
| JP2007220724A | 2007-08-30 | |||
| CN202111278434A | 2021-10-30 |
Other References:
CHINA NATIONAL INTELLECTUAL PROPERTY ADMINISTRATION, 30 October 2021 (2021-10-30)
Attorney, Agent or Firm:
SHENPAT INTELLECTUAL PROPERTY AGENCY (CN)
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