Title:
INSULATED GATE BIPOLAR TRANSISTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2017/193321
Kind Code:
A1
Abstract:
An insulated gate bipolar transistor structure comprises: a collector electrode (323) located at a bottom portion; a collector region (316) disposed at the top of a collector electrode (323) and having a second conduction type; a buffer region (315) disposed at the top of the collector region (316) and having a first conduction type; a drift region (314) disposed at the top of the buffer region (315) and having the first conduction type; a buried dielectric (333) formed by an insulation material surrounded by an upper surface portion of the drift region (314); an ultrathin polysilicon base region (313) disposed at the top of the drift region (314) and near the buried dielectric (333), and having the second conduction type; a gate dielectric (332) surrounded by another upper surface portion of the drift region (314) and near the polysilicon base region (313); a gate electrode (322) partially surrounded by the gate dielectric (332); a polysilicon emitter region (311) having the first conduction type, located near the gate dielectric (332) and at the tops of the polysilicon base region (313) and the buried dielectric (333); a polysilicon spreading region (312) arranged in parallel to the polysilicon emitter region (311) and having the second conduction type; an emitter electrode (321) shorting the emitter region (311) and the spreading region (312); and an inter-layer dielectric (331) isolating the emitter electrode (321) and the gate electrode (322). The embodiment can in theory produce the lowest conduction voltage drop.
Inventors:
ZHOU XIANDA (CN)
SHU XIAOPING (CN)
XU YUANMEI (CN)
SHU XIAOPING (CN)
XU YUANMEI (CN)
Application Number:
PCT/CN2016/081798
Publication Date:
November 16, 2017
Filing Date:
May 12, 2016
Export Citation:
Assignee:
ZHONGSHAN HKG TECH LIMITED (CN)
International Classes:
H01L29/739; H01L29/06; H01L29/10
Foreign References:
| CN103094324A | 2013-05-08 | |||
| CN104576741A | 2015-04-29 | |||
| CN104769723A | 2015-07-08 | |||
| EP1132970A2 | 2001-09-12 | |||
| CN105789294A | 2016-07-20 | |||
| CN105762077A | 2016-07-13 |
Attorney, Agent or Firm:
SHENZHEN QIANNA PATENT AGENCY LTD (CN)
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