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Title:
INSULATION FILM FORMING MATERIAL, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/171014
Kind Code:
A1
Abstract:
This insulation film forming material is for forming an insulation film through hybrid bonding, and contains: a polyimide precursor (A) which is at least one resin selected from the group consisting of polyamic acid, polyamic acid esters, polyamic acid salts, and polyamic acid amides; and a polymerizable monomer (B). The contained amount of a compound that includes a (meth)acrylic group and an alkylene oxide chain classified as the polymerizable monomer (B) is less than 20 parts by mass with respect to 100 parts by mass of the polyimide precursor (A).

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Inventors:
KOBAYASHI KAORI (JP)
MATSUKAWA DAISAKU (JP)
YONEDA SATOSHI (JP)
ADACHI KENYA (JP)
Application Number:
PCT/JP2022/037511
Publication Date:
September 14, 2023
Filing Date:
October 06, 2022
Export Citation:
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Assignee:
HD MICROSYSTEMS LTD (JP)
International Classes:
C08F283/04; C08F2/44; C08F290/14; C08G73/10; H01L21/60
Domestic Patent References:
WO2020071201A12020-04-09
WO2020071437A12020-04-09
WO2018066395A12018-04-12
Foreign References:
JP2021197430A2021-12-27
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
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