Title:
INTEGRATED CIRCUIT DEVICE AND FABRICATION USING METAL-DOPED CHALCOGENIDE MATERIALS
Document Type and Number:
WIPO Patent Application WO2003020998
Kind Code:
A3
Abstract:
Methods of forming metal-doped chalcogenide layers and devices containing such doped chalcogenide layers include using a plasma to induce diffusion of metal into a chalcogenide layer concurrently with metal deposition. The plasma contains at least one noble gas of low atomic weight, such as neon or helium. The plasma has a sputter yield sufficient to sputter a metal target and a UV component of its emitted spectrum sufficient to induce diffusion of the sputtered metal into the chalcogenide layer. Using such methods, a conductive layer can be formed on the doped chalcogenide layer (in situ. )In integrated circuit devices, such as non-volatile chalcogenide memory devices, doping of the chalcogenide layer concurrently with metal deposition and formation of a conductive layer (in situ )with the doping of the chalcogenide layer reduces contamination concerns and physical damage resulting from moving the device substrate from tool to tool, thus facilitating improved device reliability.a
Inventors:
LI JIUTAO
MCTEER ALLEN
MCTEER ALLEN
Application Number:
PCT/US2002/027526
Publication Date:
January 29, 2004
Filing Date:
August 30, 2002
Export Citation:
Assignee:
MICRON TECHNOLOGY INC (US)
International Classes:
C23C14/06; C23C14/54; C23C14/58; C23C14/34; H01L27/105; H01L27/24; H01L45/00; (IPC1-7): C23C14/18; C23C14/34; H01L27/24
Domestic Patent References:
| WO2000048196A1 | 2000-08-17 |
Foreign References:
| US4089714A | 1978-05-16 | |||
| US5667645A | 1997-09-16 | |||
| US3886577A | 1975-05-27 | |||
| GB1600599A | 1981-10-21 | |||
| DE1419289A1 | 1968-12-12 |
Other References:
KOLOMIETS B T ET AL: "Modification of vitreous As2Se3", SOLAR ENERGY MATERIALS, vol. 8, no. 1-3, November 1982 (1982-11-01), pages 1 - 8, XP009014233, ISSN: 0165-1633
KIM D Y ET AL: "Diffusion of metal ions and stimulated currents into a As2Se3 thin films", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1 (REGULAR PAPERS & SHORT NOTES), vol. 28, no. 6, June 1989 (1989-06-01), pages 965 - 971, XP000039498, ISSN: 0021-4922
KIM D Y ET AL: "Diffusion of metal ions and stimulated currents into a As2Se3 thin films", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1 (REGULAR PAPERS & SHORT NOTES), vol. 28, no. 6, June 1989 (1989-06-01), pages 965 - 971, XP000039498, ISSN: 0021-4922
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