Title:
INTEGRATED POWER DEVICE BASED ON COPOLYMER ORGANIC SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/2023/131037
Kind Code:
A1
Abstract:
Provided in the present invention is an integrated power device based on a copolymer organic semiconductor. A two-dimensional carrier deceleration area structure is introduced between a gate electrode and a drain electrode, so as to reduce the speed of carriers in a deceleration area in bipolar conduction, such that the probability of the carrier transition between organic molecules is reduced, and the carrier multiplication effect in the copolymer organic semiconductor is inhibited, thereby significantly improving the voltage resistance of a copolymer organic semiconductor device, and increasing a breakdown voltage. During an actual manufacture process, only a source electrode, a drain electrode and a gate electrode require thermal evaporation deposition or magnetron sputtering, and a copolymer organic semiconductor layer and an organic gate dielectric layer can both be prepared by means of spin-coating, such that a process flow is simplified, the preparation is simple, and the cost is low. A copolymer organic semiconductor material serving as a semiconductor layer and an organic dielectric material serving as a gate dielectric layer are decomposed into water and carbon dioxide at a high temperature, and the gate dielectric layer material and the copolymer semiconductor material are non-toxic and harmless, and environmentally friendly, and do not cause secondary pollution of the environment.
Inventors:
ZHANG JUN (CN)
GUO YUFENG (CN)
YAO JIAFEI (CN)
CHEN JING (CN)
LI MAN (CN)
GUO YUFENG (CN)
YAO JIAFEI (CN)
CHEN JING (CN)
LI MAN (CN)
Application Number:
PCT/CN2022/143104
Publication Date:
July 13, 2023
Filing Date:
December 29, 2022
Export Citation:
Assignee:
UNIV NANJING POSTS & TELECOMMUNICATIONS (CN)
NANTONG INSTITUTE OF NANJING UNIV OF POSTS AND TELECOMMUNICATIONS CO LTD (CN)
NANTONG INSTITUTE OF NANJING UNIV OF POSTS AND TELECOMMUNICATIONS CO LTD (CN)
International Classes:
H10K10/40; H10K10/80
Foreign References:
| CN114300616A | 2022-04-08 | |||
| CN108604638A | 2018-09-28 | |||
| CN103996791A | 2014-08-20 | |||
| CN105679940A | 2016-06-15 |
Attorney, Agent or Firm:
NANJING ZHENGLIAN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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