ION BEAM DEVICE AND SAMPLE OBSERVATION METHOD

WIPO Patent Application WO/2016/051441

A1

Compared to a common SEM that maintains the sample chamber in a high vacuum, an SEM of a type in which the sample chamber is separated from the electron source using a special thin film has problems in terms of deterioration of the resolving power and durability of the thin film due to the scattering of the first order electron beam upon passage through the thin film. Meanwhile, since an electron beam that passes through a differential exhaust port gives rise to a diffraction phenomenon, an electron beam whereof the probe diameter has been narrowed cannot pass through a hole having an aspect ratio of a given value or greater, and therefore, the degree of vacuum on the electron beam side cannot be increased. This invention allows an observation image of the surface of a sample (31) to be obtained by placing the sample under atmospheric pressure or under an equivalent pressure thereto, in a state in which the degree of vacuum on the ion beam side is stabilized by equipping the ion beam device with a high aspect ratio differential exhaust port (325). In addition, the ion beam is used to fabricate the differential exhaust port (325) every time, allowing for both a normal high resolution image observation and an image observation under atmospheric pressure or an equivalent pressure thereto.

MATSUBARA SHINICHI (JP)
SHICHI HIROYASU (JP)
OHSHIMA TAKASHI (JP)

PCT/JP2014/075772

April 07, 2016

September 29, 2014

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HITACHI LTD (JP)

H01H37/18; H01J37/28

WO2013161837A1

2013-10-31

JP2009142871A	2009-07-02
JPS6296255U	1987-06-19
JP2009163981A	2009-07-23
JP2014075520A	2014-04-24

INOUE Manabu et al. (JP)
Manabu Inoue (JP)

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