ION IMPLANTATION METHOD

WIPO Patent Application WO/2022/257323

A1

The present invention relates to an ion implantation method. In the ion implantation method, during the process of forming an implantation mask, an ONO stack is first formed on a semiconductor substrate, and then a second oxide layer and nitride layer therein are etched in sequence to form a second opening; when the depth of the second opening meets ion implantation requirements, the ONO stack which has the second opening is used as the implantation mask. During the process of obtaining the second opening, the second oxide layer and the nitride layer are etched at an angle that is perpendicular to the upper surface of the semiconductor substrate, so that the obtained second opening has good perpendicularity and the shape is easy control, which helps to improve the precision of ion implantation, and facilitates meeting shape control requirements of the design of a small linewidth device. Moreover, the film stability of the ONO stack is good. Even if the thickness is set as great in order to meet high-energy ion implantation, the device is not prone to collapsing, and the process requirements of small linewidth and/or high-energy ion implantation can be met.

ZHOU JUN (CN)
SUN PENG (CN)
YANG DAOHONG (CN)
WEI DANQING (CN)

PCT/CN2021/125442

December 15, 2022

October 21, 2021

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WUHAN XINXIN SEMICONDUCTOR MFG (CN)

H01L21/265; H01J37/317; H01L21/266

CN113394085A	2021-09-14
JPS6261355A	1987-03-18
TW204409B	1993-04-21
CN108321089A	2018-07-24
CN105810568A	2016-07-27
CN112670234A	2021-04-16
JP2003248293A	2003-09-05
KR20100045110A	2010-05-03
US20040157404A1	2004-08-12

SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY (CN)

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