ION SOURCE APPARATUS WITH ADJUSTABLE PLASMA DENSITY

WIPO Patent Application WO/2022/242126

A1

An ion source apparatus with an adjustable plasma density, which belongs to the field of semiconductor devices. A coil is wound on the outer side of a discharge cavity of the ion source device having an adjustable plasma density; a radio frequency module is connected to the coil; an air intake pipe passes through an ion source chamber and is in communication with the discharge cavity; the ion source chamber and the discharge cavity are provided with grids on open end face sides in the same direction; and the discharge cavity is composed of a large-diameter section discharge cavity and a small-diameter section discharge cavity that have non-uniform diameters, wherein the large-diameter section discharge cavity is in communication with the small-diameter section discharge cavity, one end face of the large-diameter section discharge cavity being an open end face, and the open end face facing the grids. Coils at different positions are used, such that a middle area and a marginal area of a wafer can be bombarded separately and integrally, thereby adjusting the plasma density distribution of a discharge cavity, and ensuring the etching uniformity thereof.

ZHANG YAOYAO (CN)
LIU XIAOBO (CN)
HU DONGDONG (CN)
ZHANG HUAIDONG (CN)
LIU HAIYANG (CN)
LI XIAOLEI (CN)
LI NA (CN)
GUO SONG (CN)
XU KAIDONG (CN)

PCT/CN2021/137792

November 24, 2022

December 14, 2021

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JIANGSU LEUVEN INSTR CO LTD (CN)

H01J27/18; H01J37/08; H05H1/46

CN101167155A	2008-04-23
CN101641764A	2010-02-03
CN105789011A	2016-07-20
JP2011065969A	2011-03-31

NANJING JINGWEI PATENT & TRADEMARK AGENCY CO., LTD (CN)

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