Title:
ION STABILIZER-DOPED PEROVSKITE FILM, PREPARATION METHOD THEREFOR AND APPLICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2019/128864
Kind Code:
A1
Abstract:
Disclosed is an ion stabilizer-doped perovskite film. The perovskite film is doped with an ion stabilizer, and the ion stabilizer has a chemical structure general formula of R1-R-R2, wherein R is an alkyl group, R1 is any one of an alkyl, aryl, hydroxy, carboxyl, alkoxy, amino, substituted amino, ester or amide group, and R2 is at least one of a halogen, oxygen-containing group, sulfur-containing group, nitrogen-containing group, phosphorus-containing group, arsenic-containing group, and carbon-containing group. Also disclosed are a preparation method for and application of the ion stabilizer-doped perovskite film. By means of ion stabilizer doping, a doped perovskite solar cell may be prepared, wherein battery performance is improved and stability of the solar cell is improved.
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Inventors:
YAO JIZHONG (CN)
YAN BUYI (CN)
GU NANNAN (CN)
HU TIANTIAN (CN)
SHENG RUI (CN)
YAN BUYI (CN)
GU NANNAN (CN)
HU TIANTIAN (CN)
SHENG RUI (CN)
Application Number:
PCT/CN2018/122631
Publication Date:
July 04, 2019
Filing Date:
December 21, 2018
Export Citation:
Assignee:
HANGZHOU MICROQUANTA SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L51/42
Foreign References:
| CN108232014A | 2018-06-29 | |||
| CN105470397A | 2016-04-06 | |||
| CN104926842A | 2015-09-23 | |||
| US20170287649A1 | 2017-10-05 |
Attorney, Agent or Firm:
HANGZHOU AOCHUANG INTELLECTUAL PROPERTY AGENCY CO., LTD (CN)
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