Title:
JBS DIODE STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/055902
Kind Code:
A1
Abstract:
The present invention provides a JBS diode structure and a preparation method therefor. The JBS diode structure comprises a first conductive type substrate, a first conductive type epitaxial layer, second conductive type well regions, a first electrode, and a second electrode, wherein the epitaxial layer is located on the upper surface of the substrate; the plurality of well regions are arranged at intervals and are located on the upper surface layer of the epitaxial layer, and each well region comprises a first injection region and a second injection region, a plurality of second conductive type doped regions which are stacked upwards in sequence form the second injection region, and the transverse widths of the doped regions are greater than the transverse width of the first injection region; and the first electrode is located on the upper surface of the epitaxial layer and is electrically connected to the epitaxial layer and the well regions, and the second electrode is located on the lower surface of the substrate and electrically connected to the substrate. According to the present invention, by adjusting the process of forming the well regions, tip regions having a large curvature are formed on the side walls of the well regions, and the electric field strength of the tip regions are increased, such that the peak value of electric field strength of a device transfers to the tip regions on the side walls of the well regions, a leakage current of the device is reduced, and a reverse breakdown voltage of the device is improved.
Inventors:
ZHAO LONGJIE (CN)
ZHANG XIN (CN)
ZHENG FANG (CN)
ZHANG XIN (CN)
ZHENG FANG (CN)
Application Number:
PCT/CN2023/117550
Publication Date:
March 21, 2024
Filing Date:
September 07, 2023
Export Citation:
Assignee:
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO LTD (CN)
International Classes:
H01L29/06
Foreign References:
| CN109473482A | 2019-03-15 | |||
| CN114981924A | 2022-08-30 | |||
| US20170271528A1 | 2017-09-21 | |||
| CN102473738A | 2012-05-23 | |||
| CN103107204A | 2013-05-15 |
Attorney, Agent or Firm:
J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (GENERAL PARTNERSHIP) (CN)
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