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Title:
LAMINATE STRUCTURE, STAGE, SEMICONDUCTOR MANUFACTURING DEVICE, AND MANUFACTURING METHOD FOR LAMINATE STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2023/120112
Kind Code:
A1
Abstract:
This laminate structure is for a semiconductor manufacturing device, the laminate structure including: a base body containing aluminum and having a first surface; an intermediate layer disposed on the first surface of the base body and containing aluminum oxide; and a cover layer disposed on the intermediate layer and containing metal atoms. The intermediate layer has a partition wall which forms a plurality of voids in a cross-sectional shape parallel to the first surface. The intermediate layer has a boundary layer covering the first surface of the base body. The cover layer is disposed on a portion of the plurality of voids in the intermediate layer. The plurality of voids include voids adjacent to the boundary layer and separated from the cover layer.

Inventors:
OTSUKA YUSUKE (JP)
KIDA NAOYA (JP)
FUTAKUCHIYA JUN (JP)
KANEDA NORIYOSHI (JP)
YOKOYAMA HIBIKI (JP)
SONE MICHIYOSHI (JP)
SAKAMOTO HIROKI (JP)
Application Number:
PCT/JP2022/044537
Publication Date:
June 29, 2023
Filing Date:
December 02, 2022
Export Citation:
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Assignee:
NHK SPRING CO LTD (JP)
International Classes:
H01L21/683; B32B9/04; B32B15/04; B32B15/20; C23C14/50; H01L21/205; H01L21/31
Foreign References:
JP2006241589A2006-09-14
JP2017115193A2017-06-29
JPH05210245A1993-08-20
JP2007227443A2007-09-06
Attorney, Agent or Firm:
TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)
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