Title:
LAMINATED STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/064783
Kind Code:
A1
Abstract:
This laminated structure comprises a semiconductor film having a corundum-type crystal structure comprising an α–Ga2O3 or α–Ga2O3-based solid solution on a base substrate. The average film thickness of the semiconductor film is at least 10 μm. The semiconductor film is warped in a protruding or recessed shape and the amount of semiconductor film warpage is 20–64 μm.
Inventors:
FUKUI HIROSHI (JP)
WATANABE MORIMICHI (JP)
YOSHIKAWA JUN (JP)
WATANABE MORIMICHI (JP)
YOSHIKAWA JUN (JP)
Application Number:
PCT/JP2021/021939
Publication Date:
March 31, 2022
Filing Date:
June 09, 2021
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
C30B29/16; B32B9/00; C23C16/40; C30B25/14
Domestic Patent References:
| WO2020194763A1 | 2020-10-01 |
Foreign References:
| JP2016157878A | 2016-09-01 | |||
| JP2016013932A | 2016-01-28 |
Attorney, Agent or Firm:
ITEC INTERNATIONAL PATENT FIRM (JP)
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