LARGE-AREA SINGLE-CRYSTAL SILVER THIN-FILM STRUCTURE USING SINGLE-CRYSTAL COPPER THIN-FILM BUFFER LAYER AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2022/097953

A1

The present invention relates to a large-area single-crystal silver thin-film structure using a single-crystal copper thin-film buffer layer, and a method for manufacturing same, the large-area single-crystal silver thin-film structure comprising: a transparent substrate (10); a single-crystal copper thin-film buffer layer (20) formed by deposition on the transparent substrate; and a single-crystal silver thin-film layer (30) deposited on the single-crystal copper thin-film buffer layer (20) and having a certain directionality. The technical gist of the present invention is manufacturing through: a single-crystal copper thin-film buffer layer forming step (S100) in which a single-crystal copper thin film is deposited on a transparent substrate (10) by using a single-crystal copper ingot target to form a buffer layer; and a single-crystal silver thin-film layer forming step (S20) in which a single-crystal silver thin-film layer (30) is deposited on the single-crystal copper thin-film buffer layer (20) by using a single-crystal silver ingot target.

JEONG SE YOUNG (KR)
KIM SU JAE (KR)
LEE YOU SIL (KR)

PCT/KR2021/014350

May 12, 2022

October 15, 2021

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NAT UNIV PUSAN IND UNIV COOP FOUND (KR)

G02B5/08; C30B23/08; C30B29/02; C30B29/20; G02B1/02

KR102095580B1	2020-03-31
KR101802069B1	2017-11-28
KR102114658B1	2020-05-25
KR20140069837A	2014-06-10
JP2002339084A	2002-11-27
KR20060051658A	2006-05-19

KIM, Jong Seok (KR)

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