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Patent Searching and Data


Title:
LASER DEVICES
Document Type and Number:
WIPO Patent Application WO2002041456
Kind Code:
A3
Abstract:
This invention concerns the use of engineered deep-etch air/semiconductor Bragg reflector gratings in order to control the spectral and spatial emission in short-wavelength laser diodes. The technique consists of introducing a high-order deep-etch distributed reflector of controlled depth, pitch and position into the laser cavity, in order to selectively enhance the modal reflectivity of one, or a selected number, or lasing modes.

Inventors:
MARINELLI CLAUDIO (GB)
RORISON JUDY MEGAN (GB)
SARGENT LAURENCE (GB)
PENTY RICHARD VINCENT (GB)
BORDOVSKY MICHAL (GB)
WHITE IAN HUGH (GB)
Application Number:
PCT/GB2001/005033
Publication Date:
January 16, 2003
Filing Date:
November 15, 2001
Export Citation:
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Assignee:
UNIV BRISTOL (GB)
MARINELLI CLAUDIO (GB)
RORISON JUDY MEGAN (GB)
SARGENT LAURENCE (GB)
PENTY RICHARD VINCENT (GB)
BORDOVSKY MICHAL (GB)
WHITE IAN HUGH (GB)
International Classes:
H01S5/343; H01S5/12; H01S5/22; (IPC1-7): H01S5/12; H01S5/343
Other References:
MARINELLI C ET AL: "Threshold current reduction in InGaN MQW laser diode with lambda/4 air/semiconductor Bragg reflectors", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 36, no. 20, 28 September 2000 (2000-09-28), pages 1706 - 1707, XP006015781, ISSN: 0013-5194
MARINELLI C ET AL: "Reduced threshold current and enhanced mode selectivity in InGaN MQW lasers with deeply etched air/nitride distributed Bragg reflector", LEOS 2000. 2000 IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS. 13TH ANNUAL MEETING. IEEE LASERS AND ELECTRO-OPTICS SOCIETY 2000 ANNUAL MEETING (CAT. NO.00CH37080), LEOS 2000. 2000 IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, RIO GRANDE, PUERTO RICO, 13-1, 2000, Piscataway, NJ, USA, IEEE, USA, pages 653 - 654 vol.2, XP002209903, ISBN: 0-7803-5947-X
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