Title:
LASER DIODE ORIENTATION ON MIS-CUT SUBSTRATES
Document Type and Number:
WIPO Patent Application WO2007008394
Kind Code:
A8
Abstract:
A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate (201). In an illustrative implementation, a laser diode is oriented on a GaN substrate (201) wherein the GaN substrate includes a GaN (0001) surface off-cut from the <0001> direction predominantly towards either the <1120> or the <11 00> family of directions. For a <11 20> off-cut substrate, a laser diode cavity (207) may be oriented along the <1 100> direction parallel to lattice surface steps (202) of the substrate (201) in order to have a cleaved laser facet that is orthogonal to the surface lattice steps. For <11 00> off-cut substrate, the laser diode cavity may be oriented along the <1 100> direction orthogonal to lattice surface steps (207) of the substrate (201) in order to provide a cleave laser facet that is aligned with the surface lattice steps.
More Like This:
Inventors:
BRANDES GEORGE R (US)
VAUDO ROBERT P (US)
XU XUEPING (US)
VAUDO ROBERT P (US)
XU XUEPING (US)
Application Number:
PCT/US2006/024846
Publication Date:
June 14, 2007
Filing Date:
June 27, 2006
Export Citation:
Assignee:
CREE INC (US)
BRANDES GEORGE R (US)
VAUDO ROBERT P (US)
XU XUEPING (US)
BRANDES GEORGE R (US)
VAUDO ROBERT P (US)
XU XUEPING (US)
International Classes:
H01L33/00; H01S3/02
Download PDF: