Title:
LASER DOPING DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/163356
Kind Code:
A1
Abstract:
A laser doping device is provided with: a solution supply system which supplies a doping region with a solution including a dopant; a pulsed laser system which outputs pulsed laser light that passes through the solution and that includes a plurality of pulses; a first control unit which controls the number of pulses of the pulsed laser light for irradiating the doping region, and the fluence of the pulsed laser light in the doping region; and a second control unit which controls the flow velocity of the solution so as to cause bubbles, produced in the solution each time a pulse is irradiated, to move from the doping region.
Inventors:
IKENOUE HIROSHI (JP)
SUWA AKIRA (JP)
WAKABAYASHI OSAMU (JP)
SUWA AKIRA (JP)
WAKABAYASHI OSAMU (JP)
Application Number:
PCT/JP2016/059338
Publication Date:
September 28, 2017
Filing Date:
March 24, 2016
Export Citation:
Assignee:
UNIV KYUSHU (JP)
GIGAPHOTON INC (JP)
GIGAPHOTON INC (JP)
International Classes:
H01L21/228
Domestic Patent References:
| WO2015189875A1 | 2015-12-17 |
Foreign References:
| JP2007079590A | 2007-03-29 | |||
| JPH01313930A | 1989-12-19 | |||
| JPH0927460A | 1997-01-28 |
Attorney, Agent or Firm:
KYORITSU INSTITUTE (JP)
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