LASER LIFT-OFF METHOD AND LASER LIFT-OFF APPARATUS

WIPO Patent Application WO/2012/002155

A1

Disclosed are a laser lift-off method and a laser lift-off apparatus, wherein a material layer formed on a substrate can be peeled from the substrate without generating cracks in the material layer formed on the substrate. In order to peel the material layer (2) from the substrate (1) at the interface between the substrate and the material layer, a pulsed laser beam is applied, through the substrate (1), to a work (3) wherein the material layer (2) is formed on the substrate (1), while constantly changing the irradiation region on the work (3), such that adjacent irradiation regions of the work (3) overlap each other. Respective laser beams in the overlapping irradiation region are set at levels having energy that exceeds a decomposition threshold value needed to peel the material layer (2) from the substrate (1), thereby having the material layer reliably peeled from the substrate without generating cracks in the material layer formed on the substrate.

MATSUDA RYOZO (JP)
NARUMI KEIJI (JP)
TANAKA KAZUYA (JP)

PCT/JP2011/063777

January 05, 2012

June 16, 2011

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USHIO ELECTRIC INC (JP)
MATSUDA RYOZO (JP)
NARUMI KEIJI (JP)
TANAKA KAZUYA (JP)

H01L21/268; B23K26/00; B23K26/36; C23C16/01; C30B33/08; H01L21/02; H01L21/20; H01L21/205

JP2003168820A	2003-06-13
JP2005516415A	2005-06-02
JP2007534164A	2007-11-22
JPH1055979A	1998-02-24

TONG XL ET AL.: "The influences of laser scanning speed on the structural and optical properties of thin GaN films s", JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol. 42, no. 4, 21 February 2009 (2009-02-21), pages 045414 - 1 - 045414-4

NAGASAWA Shunichirou (JP)
Shunichiro Nagasawa (JP)

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