Title:
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/017601
Kind Code:
A1
Abstract:
The present application relates to a laterally diffused metal oxide semiconductor device and a manufacturing method therefor. The method comprises: acquiring a substrate (100) with a trench (108) on a surface; forming an isolation structure; forming a field plate dielectric structure (110) on two sides of the trench (108), forming a drain region (112) in the substrate (100), wherein the drain region (112) is at least partially covered by the field plate dielectric structure (110); forming a source region (114) in the substrate (100) in the middle position of the trench (108); and forming a gate electrode (116) on a surface of the field plate dielectric structure (110), wherein the gate electrode (116) extends down the field plate dielectric structure (110) to a surface of the substrate at the bottom of the opening.
Inventors:
MA CHUNXIA (CN)
LIN FENG (CN)
XU CHAOQI (CN)
SUN GUIPENG (CN)
LIN FENG (CN)
XU CHAOQI (CN)
SUN GUIPENG (CN)
Application Number:
PCT/CN2020/092889
Publication Date:
February 04, 2021
Filing Date:
May 28, 2020
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L21/336; H01L29/78
Foreign References:
| US20150140750A1 | 2015-05-21 | |||
| CN109216276A | 2019-01-15 | |||
| CN105097931A | 2015-11-25 | |||
| US20150340428A1 | 2015-11-26 | |||
| CN103390645A | 2013-11-13 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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