Title:
LED ELEMENT AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2014/171467
Kind Code:
A1
Abstract:
Provided are an LED element capable of improving light-extraction efficiency, and a method for producing the same. The LED element is provided with: a semiconductor layer section containing a light-emitting layer; a diffraction surface which has light emitted from the light-emitting layer incident thereon, has projections formed thereon at a period which is larger than the optical wavelength of the light and smaller than the coherence length of the light, reflects the incident light in a plurality of modes according to Bragg diffraction conditions, and transmits the incident light in a plurality of modes according to the Bragg diffraction conditions; and a reflective surface for reflecting the light which was diffracted by the diffraction surface, and projecting said light onto the diffraction surface again. Therein, the semiconductor layer section is formed around the periphery of the projections on the diffraction surface with no gaps interposed therebetween, and flat sections constitute 40% or more of the diffraction surface when seen from a planar view.
Inventors:
KITANO TSUKASA (JP)
MORI MIDORI (JP)
KONDO TOSHIYUKI (JP)
SUZUKI ATSUSHI (JP)
NANIWAE KOICHI (JP)
OHYA MASAKI (JP)
MORI MIDORI (JP)
KONDO TOSHIYUKI (JP)
SUZUKI ATSUSHI (JP)
NANIWAE KOICHI (JP)
OHYA MASAKI (JP)
Application Number:
PCT/JP2014/060763
Publication Date:
October 23, 2014
Filing Date:
April 15, 2014
Export Citation:
Assignee:
EL SEED CORP (JP)
International Classes:
H01L33/22; H01L33/10
Domestic Patent References:
| WO2011027679A1 | 2011-03-10 |
Foreign References:
| JP2008177528A | 2008-07-31 | |||
| JP2010074090A | 2010-04-02 |
Attorney, Agent or Firm:
SHIGEIZUMI, Tatsushi (JP)
重泉 Tatsushi (JP)
重泉 Tatsushi (JP)
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