Title:
LIGHT RECEPTION/EMISSION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2014/030268
Kind Code:
A1
Abstract:
[Problem] Provided is a light reception/emission element enabling light emission efficiency to be improved and having a light reception function in addition to a light emission function. [Solution] This invention is configured so as to enable sequential switching between: a light emission mode and a light reception mode. In the light emission mode, a stronger diffusion current is generated at the junction part between the p-layer and the n-layer by applying a higher forward bias voltage, whereby an inverted distribution is generated in the conduction band and the valence band, electrons in the conduction band forming the inverted distribution are caused to undergo stimulated emission in a plurality of stages on the basis of an non-adiabatic process and thereby emit light in a portion at which near-field light is generated, and generation of near-field light is further accelerated on the basis of the emitted light. In the light reception mode, a lower diffusion current is generated at the junction between the p-layer and the n-layer by applying a smaller forward bias voltage, whereby in a portion at which external light is received and near-field light is generated, electrons in the valence band are caused to undergo stimulated transition in a plurality of stages on the basis of a non-adiabatic process, whereby the light is received.
Inventors:
SUGIMORI TERUHIKO (JP)
OHTSU MOTOICHI (JP)
KAWAZOE TADASHI (JP)
OHTSU MOTOICHI (JP)
KAWAZOE TADASHI (JP)
Application Number:
PCT/JP2013/001008
Publication Date:
February 27, 2014
Filing Date:
February 22, 2013
Export Citation:
Assignee:
SPECIFIED NONPROFIT CORP NANOPHOTONICS ENGINEERING ORGANIZATION (JP)
International Classes:
H05B33/14; H01L31/12; H01S5/323; H05B33/10
Foreign References:
| JP2011114076A | 2011-06-09 | |||
| JP2007273832A | 2007-10-18 | |||
| JP2007286045A | 2007-11-01 | |||
| JP2010238775A | 2010-10-21 |
Other References:
T.KAWAZOE ET AL.: "Highly efficient and broadband Si homojunction structured near-infrared light emitting diodes based on the phonon-assisted optical near-field process", APPLIED PHYSICS B, vol. 104, no. 4, June 2011 (2011-06-01), pages 747 - 754
Attorney, Agent or Firm:
ABIKO, Gen (JP)
Yasuhiko Origin (JP)
Yasuhiko Origin (JP)
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