LIGHT-EMITTING DIODE DEVICE AND PRODUCTION METHOD THEREFOR

WIPO Patent Application WO/2021/203355

A1

Disclosed are a light-emitting diode device and a production method therefor. The present invention is not only suitable for light-emitting diode devices having vertical structures, but also suitable for other series of light-emitting diode devices having horizontal structures, high-voltage structures, etc. The light-emitting diode device comprises a substrate and a plurality of mesa structures located on the upper surface of the substrate; the mesa structures comprise light-emitting diode mesas located in light-emitting areas and cutting area mesas located in cutting areas; the light-emitting diode mesas and the cutting area mesas are arranged alternately; the cutting area comprises a cutting channel and a spacing area; a reflective metal layer, a sacrificial layer, and a first insulating layer inside the cutting channel are distributed in a trapezoidal shape; such a trapezoidal distribution effectively improves the continuous direction of stress at the cutting channel and reduces continuous accumulation of stress. Therefore, stress lines and the abnormality that a semiconductor epitaxial layer is prone to peel off and fall off are reduced or eliminated, the appearance yield of the light-emitting diode device can be effectively improved, and the product quality of the light-emitting diode device is improved.

CAI LINRONG (CN)
YANG LIXUN (CN)
TSENG HSIN-YI (CN)
ZHU LIQIN (CN)

PCT/CN2020/083931

October 14, 2021

April 09, 2020

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XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD (CN)

H01L33/24; H01L27/32

WO2013046545A1

2013-04-04

CN202839726U	2013-03-27
CN107742476A	2018-02-27
CN109360843A	2019-02-19
CN109860369A	2019-06-07

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