Title:
LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/177026
Kind Code:
A1
Abstract:
Disclosed are a light-emitting diode and a manufacturing method therefor, the light-emitting diode comprising: a substrate having top and bottom surfaces opposite one another; a DBR reflective layer formed on the top surface of the substrate; a semiconductor stack layer formed on the DBR reflective layer, emitting light having a first wavelength; the reflectivity of the DBR reflective layer relative to a first light wave is 30% or below, and the reflectivity relative to a second light wave different to the first light wave is 60% or above, the first light wave being emitted by the light-emitting diode and the second light wave not being emitted by the light-emitting diode.
Inventors:
WANG QING (CN)
CHEN DAZHONG (CN)
HSU SHENG-HSIEN (CN)
HONG LING-YUAN (CN)
PENG KANG-WEI (CN)
LIN SU-HUI (CN)
CHANG CHIA-HUNG (CN)
CHEN DAZHONG (CN)
HSU SHENG-HSIEN (CN)
HONG LING-YUAN (CN)
PENG KANG-WEI (CN)
LIN SU-HUI (CN)
CHANG CHIA-HUNG (CN)
Application Number:
PCT/CN2019/076731
Publication Date:
September 10, 2020
Filing Date:
March 01, 2019
Export Citation:
Assignee:
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L33/00
Foreign References:
| CN101038948A | 2007-09-19 | |||
| CN108832484A | 2018-11-16 | |||
| JP2008147504A | 2008-06-26 | |||
| JP2007299949A | 2007-11-15 |
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