LIGHT-EMITTING DIODE AND MANUFACTURING METHOD

WIPO Patent Application WO/2022/266918

A1

Disclosed in the present invention are a light-emitting diode and a manufacturing method. The light-emitting diode comprises: a substrate, having a first surface and a second surface that are opposite to each other; a semiconductor epitaxial laminated layer, comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer that are laminated on the first surface of the substrate; and a side wall, formed at the edge of the semiconductor epitaxial laminated layer, the side wall having a roughened structure, and the roughened structure comprising a protrusion. The light-emitting diode is characterized in further comprising an etching stop layer, located on the upper surface of the semiconductor epitaxial laminated layer away from the substrate. The etching stop layer is capable of preventing the upper surface of the semiconductor epitaxial laminated layer from being etched by an etching solution in a side wall roughening process, improving the appearance yield of a semiconductor light-emitting diode, and improving the photoelectric properties of the light-emitting diode.

SHEN WUQI (CN)
HU DIE (CN)
WU SHAOHUA (CN)
WANG LINGFEI (CN)
NING ZHENDONG (CN)
HSIEH CHEN KANG (CN)
CHANG CHUN-I (CN)
WANG DUXIANG (CN)

PCT/CN2021/102005

December 29, 2022

June 24, 2021

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TIANJIN SANAN OPTOELECTRONICS CO LTD (CN)

H01L33/44; H01L33/00; H01L33/22

CN113875032A	2021-12-31
CN112670382A	2021-04-16
US20090050909A1	2009-02-26
CN105185883A	2015-12-23
US20070194325A1	2007-08-23

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