Title:
LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2013/077619
Kind Code:
A1
Abstract:
The present invention provides a highly efficient light emitting diode and a method for manufacturing same. The light emitting diode comprises: a semiconductor stacked structure disposed on a supporting substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflective layer disposed between the supporting substrate and the semiconductor stacked structure. Further, the semiconductor stacked layer includes a main pattern having a protruding portion and a recessed portion, and a rough surface formed on the protruding portion and the recessed portion of the main pattern, and has a dislocation density of 5×106/cm2. In addition, the protruding portion may include a micro cone, and the recessed portion may include a micro cone-shaped hole. Accordingly, a light emitting diode may be provided that has a low dislocation density, while having improved light extraction efficiency.
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Inventors:
KIM DA HYE (KR)
KIM CHANG YEON (KR)
JUNG JAE HYE (KR)
LEE JOON HEE (KR)
YOU JONG KYUN (KR)
LEE MI HEE (KR)
KIM CHANG YEON (KR)
JUNG JAE HYE (KR)
LEE JOON HEE (KR)
YOU JONG KYUN (KR)
LEE MI HEE (KR)
Application Number:
PCT/KR2012/009849
Publication Date:
May 30, 2013
Filing Date:
November 21, 2012
Export Citation:
Assignee:
SEOUL OPTO DEVICE CO LTD (KR)
International Classes:
H01L33/22; H01L33/12; H01L33/32
Foreign References:
| KR20080015192A | 2008-02-19 | |||
| KR20060108882A | 2006-10-18 | |||
| JP2007266472A | 2007-10-11 | |||
| KR20110107618A | 2011-10-04 |
Attorney, Agent or Firm:
AIP PATENT & LAW FIRM (KR)
특허법인에이아이피 (KR)
특허법인에이아이피 (KR)
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