Title:
LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2013/137571
Kind Code:
A1
Abstract:
A light-emitting diode and a method for manufacturing same are disclosed. This light-emitting diode comprises: a gallium nitride substrate having multiple through-holes; a gallium nitride-based semiconductor laminated structure disposed on the substrate and comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a first electrode electrically connected to the first conductive semiconductor layer via the through-holes in the gallium nitride substrate. Accordingly, the light-emitting diode has reduced crystal defects and can prevent the reduction of a light emission area.
Inventors:
SUH DUK IL (KR)
KIM KYOUNG WAN (KR)
YOON YEO JIN (KR)
KIM JI HYE (KR)
KIM KYOUNG WAN (KR)
YOON YEO JIN (KR)
KIM JI HYE (KR)
Application Number:
PCT/KR2013/001552
Publication Date:
September 19, 2013
Filing Date:
February 27, 2013
Export Citation:
Assignee:
SEOUL OPTO DEVICE CO LTD (KR)
International Classes:
H01L33/36; H01L33/20; H01L33/38
Foreign References:
| KR20110104693A | 2011-09-23 | |||
| KR20050044518A | 2005-05-12 | |||
| KR20080076308A | 2008-08-20 | |||
| KR20080002199A | 2008-01-04 | |||
| JP2007073734A | 2007-03-22 |
Attorney, Agent or Firm:
AIP PATENT & LAW FIRM (KR)
특허법인에이아이피 (KR)
특허법인에이아이피 (KR)
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