Title:
LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/052097
Kind Code:
A1
Abstract:
A light-emitting diode and a preparation method therefor. The light-emitting diode comprises a substrate (10), a first conductive semiconductor layer (20), a stress release layer (30), a light-emitting layer (40), and a second conductive semiconductor layer (50), wherein the stress release layer comprises well layers (31) and barrier layers (32), which are alternately stacked; at least one blocking area (311) is distributed in at least one well layer; and an energy gap of the blocking area is higher than that of the well layer. By means of arranging the blocking area in the well layer, the blocking area can block carriers in the well layer from laterally expanding to a dislocation area, thus undergoing non-radiative recombination, and thereby improving the light-emitting efficiency of the light-emitting diode.
Inventors:
XU ZHIBO (CN)
ZHANG ZHIHUA (CN)
MA MINGBIN (CN)
LEE CHENG-HUNG (CN)
LING CHAN-CHAN (CN)
CHANG CHIA-HAO (CN)
ZHANG ZHIHUA (CN)
MA MINGBIN (CN)
LEE CHENG-HUNG (CN)
LING CHAN-CHAN (CN)
CHANG CHIA-HAO (CN)
Application Number:
PCT/CN2020/115032
Publication Date:
March 17, 2022
Filing Date:
September 14, 2020
Export Citation:
Assignee:
ANHUI SANAN OPTOELECTRONICS CO LTD (CN)
International Classes:
H01L33/12
Foreign References:
| CN104362233A | 2015-02-18 | |||
| CN106601885A | 2017-04-26 | |||
| CN101685844A | 2010-03-31 | |||
| CN107302043A | 2017-10-27 | |||
| CN101488548A | 2009-07-22 | |||
| JP3773713B2 | 2006-05-10 |
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