Title:
LIGHT-EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO2004095591
Kind Code:
B1
Abstract:
A light-emitting diode with high luminous efficiency is disclosed which is free from deformation or defect of crystal caused by a dopant. The light-emitting diode emits no light of unnecessary wavelengths and has a wide selection of emission wavelengths. The light-emitting diode comprises a light-emitting layer composed of an ambipolar semiconductor containing no dopant, and an electron implanting electrode, namely an n electrode and a hole implanting electrode, namely a p electrode joined to the light-emitting layer.
Inventors:
KAWAZOE HIROSHI (JP)
ORITA MASAHIRO (JP)
YANAGITA HIROAKI (JP)
KOBAYASHI SATOSHI (JP)
ORITA MASAHIRO (JP)
YANAGITA HIROAKI (JP)
KOBAYASHI SATOSHI (JP)
Application Number:
PCT/JP2004/005853
Publication Date:
January 27, 2005
Filing Date:
April 23, 2004
Export Citation:
Assignee:
HOYA CORP (JP)
KAWAZOE HIROSHI (JP)
ORITA MASAHIRO (JP)
YANAGITA HIROAKI (JP)
KOBAYASHI SATOSHI (JP)
KAWAZOE HIROSHI (JP)
ORITA MASAHIRO (JP)
YANAGITA HIROAKI (JP)
KOBAYASHI SATOSHI (JP)
International Classes:
H01L33/02; H01S5/30; H01S5/323; (IPC1-7): H01L33/00
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