Title:
LIGHT-EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2021/119906
Kind Code:
A1
Abstract:
Provided in the present invention is the following light-emitting diode, which comprises: a transparent substrate, which is provided with a first surface; a semiconductor barrier crystal laminate, which comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer that are stacked in succession on the first surface of the transparent substrate; a DBR reflective layer, which covers the top surface and a side wall of the semiconductor barrier crystal laminate, and which has a first opening and a second opening; and a first electrode and a second electrode, which are respectively electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer by means of the first opening and the second opening. The DBR reflective layer contains voids. By means of introducing voids into the DBR reflective layer so that there is a greater refractive index difference between DBR laminates, the reflectivity of the present invention is increased, thereby improving the light-emitting efficiency.
Inventors:
WANG QING (CN)
MA QUANYANG (CN)
CHEN DAZHONG (CN)
HONG LING-YUAN (CN)
PENG KANG-WEI (CN)
LIN SU-HUI (CN)
MA QUANYANG (CN)
CHEN DAZHONG (CN)
HONG LING-YUAN (CN)
PENG KANG-WEI (CN)
LIN SU-HUI (CN)
Application Number:
PCT/CN2019/125580
Publication Date:
June 24, 2021
Filing Date:
December 16, 2019
Export Citation:
Assignee:
XIAMEN SANAN OPTOELECTRONICS CO LTD (CN)
International Classes:
H01L33/46
Foreign References:
| CN109742210A | 2019-05-10 | |||
| CN106848016A | 2017-06-13 | |||
| CN105932120A | 2016-09-07 | |||
| CN104064634A | 2014-09-24 | |||
| CN106848838A | 2017-06-13 | |||
| CN110165551A | 2019-08-23 | |||
| JPH1154846A | 1999-02-26 |
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