LIGHT EMITTING SEMICONDUCTOR METHODS AND DEVICES

WIPO Patent Application WO/2010/120372

A3

A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween. In a further embodiment lateral scaling is used to control device speed for high frequency operation.

WALTER GABRIEL (US)
FENG MILTON (US)
HOLONYAK NICK (US)
THEN HAN WUI (MY)
WU CHAO-HSIN (US)

PCT/US2010/001133

January 27, 2011

April 16, 2010

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UNIV ILLINOIS (US)
QUANTUM ELECTRO OPTO SYS SDN (MY)
WALTER GABRIEL (US)
FENG MILTON (US)
HOLONYAK NICK (US)
THEN HAN WUI (MY)
WU CHAO-HSIN (US)

H01S3/0941; H01S3/00

US5796714A	1998-08-18
US20050040387A1	2005-02-24
US4176367A	1979-11-27

NOVACK, Martin (Delray Beach, FL, US)

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