Title:
LIGHT SENSOR, SEMICONDUCTOR DEVICE, AND LIQUID CRYSTAL PANEL
Document Type and Number:
WIPO Patent Application WO/2011/024577
Kind Code:
A1
Abstract:
Disclosed is a light sensor in which the light use efficiency of a thin film diode contained therein is improved and therefore the light detection sensitivity of the thin film diode is improved even when the thickness of a semiconductor layer contained in the thin film diode is small. In the light sensor, a thin film diode (130) that has a first semiconductor layer (131) having therein at least an n-type region (131n) and a p-type region (131p) is provided on one surface of a substrate (101), and a silicon layer (171) is provided between the substrate and the first semiconductor layer so that the silicon layer (171) faces the first semiconductor layer. In the silicon layer (171), projections and depressions are formed on a surface that faces the first semiconductor layer. In the first semiconductor layer, projections and depressions are formed on a surface that faces the silicon layer and a surface that is opposed to the surface facing the silicon layer.
Inventors:
NAKAZAWA MAKOTO
KIMURA TOMOHIRO
KIMURA TOMOHIRO
Application Number:
PCT/JP2010/062060
Publication Date:
March 03, 2011
Filing Date:
July 16, 2010
Export Citation:
Assignee:
SHARP KK (JP)
NAKAZAWA MAKOTO
KIMURA TOMOHIRO
NAKAZAWA MAKOTO
KIMURA TOMOHIRO
International Classes:
H01L27/14; G02F1/1333; G02F1/136; G02F1/1368; G09F9/33; H01L29/786; H01L31/10
Domestic Patent References:
| WO2008132862A1 | 2008-11-06 | |||
| WO2006129428A1 | 2006-12-07 |
Foreign References:
| JP2008135564A | 2008-06-12 | |||
| JP2008135561A | 2008-06-12 | |||
| JPS6327066U | 1988-02-22 | |||
| JP2003249639A | 2003-09-05 |
Attorney, Agent or Firm:
KAWAKAMI Keiko et al. (JP)
Keiko Kawakami (JP)
Keiko Kawakami (JP)
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