LIQUID ETCHANT AND METHOD FOR FORMING TRENCH ISOLATION STRUCTURE USING SAME

Title:

LIQUID ETCHANT AND METHOD FOR FORMING TRENCH ISOLATION STRUCTURE USING SAME

Document Type and Number:

WIPO Patent Application WO/2010/137544

Kind Code:

A1

Abstract:

Disclosed are a liquid etchant which is not easily affected by a trench structure, and a method for forming an isolation structure using the liquid etchant. Specifically disclosed is liquid etchant which contains hydrofluoric acid and an organic solvent. The organic solvent has a δH of not less than 4 but not more than 12 as determined by the Hansen solubility parameters, and a saturated solubility in water at 20˚C of not less than 5%. The liquid etchant can be used in place of a conventional liquid etchant which is used in a semiconductor element forming process.

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Inventors:

SAKURAI ISSEI (JP)

Application Number:

PCT/JP2010/058711

Publication Date:

December 02, 2010

Filing Date:

May 24, 2010

Export Citation:

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Assignee:

AZ ELECTRONIC MATERIALS JAPAN (JP)
AZ ELECTRONIC MATERIALS USA (US)
SAKURAI ISSEI (JP)

International Classes:

H01L21/306; H01L21/316; H01L21/76

Foreign References:

JPH11297656A	1999-10-29
JP2000164586A	2000-06-16
JP2009094321A	2009-04-30
JP4221601B2	2009-02-12
US20070145009A1	2007-06-28
US20060126583A1	2006-06-15

Other References: