LITHOGRAPHY USING SELF-ASSEMBLED POLYMERS

WIPO Patent Application WO/2012/031818

A3

A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.

KOOLE ROELOF (NL)
DIJKSMAN JOHAN (NL)
WUISTER SANDER (NL)
PEETERS EMIEL (NL)

PCT/EP2011/062554

June 07, 2012

July 21, 2011

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ASML NETHERLANDS BV (NL)
KOOLE ROELOF (NL)
DIJKSMAN JOHAN (NL)
WUISTER SANDER (NL)
PEETERS EMIEL (NL)

H01L21/027; B81C1/00

US20060261379A1

2006-11-23

PARK C ET AL: "Enabling nanotechnology with self assembled block copolymer patterns", POLYMER, ELSEVIER SCIENCE PUBLISHERS B.V, GB, vol. 44, no. 22, 1 October 2003 (2003-10-01), pages 6725 - 6760, XP004460249, ISSN: 0032-3861, DOI: 10.1016/J.POLYMER.2003.08.011

WEENINK, Willem (DT Veldhoven, NL)

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