Title:
LOW CAPACITANCE AND HIGH-HOLDING-VOLTAGE TRANSIENT-VOLTAGE-SUPPRESSOR (TVS) DEVICE FOR ELECTRO-STATIC-DISCHARGE (ESD) PROTECTION
Document Type and Number:
WIPO Patent Application WO/2020/177141
Kind Code:
A1
Abstract:
A well-less Transient Voltage Suppressor (TVS) Silicon-Controlled Rectifier (SCR) has a P+ anode region (20) that is not in an N-well (62). The P+ anode region (20) is surrounded by N+ isolation regions (22, 24) near the surface, and a deep N+ region (30) underneath that is formed in a p-substrate (64). An N+ cathode region (40) is formed in the p-substrate (64). The deep N+ region (30) has a doping of 5 x 10 18 to 5 x 10 19/cm 3, compared to a doping of 1 x 10 16/cm 3 for a typical N-well (62), or a doping of 1 x 10 13 to 1 x 10 15/cm 3 for the p-substrate (64). The high doping in the deep N+ region (30) causes a recombination current that can shunt half of the anode current (IA). Since the deep N+ region (30) is much shallower than an N-well (62), the sidewall capacitance is greatly reduced, allowing for higher speed applications.
Inventors:
MA CHENYUE (CN)
YAM CHUN-KIT (CN)
HUO XIAO (CN)
YAM CHUN-KIT (CN)
HUO XIAO (CN)
Application Number:
PCT/CN2019/077667
Publication Date:
September 10, 2020
Filing Date:
March 11, 2019
Export Citation:
Assignee:
HONG KONG APPLIED SCIENCE & TECH RESEARCH INST CO LTD (CN)
International Classes:
H01L29/06
Foreign References:
| US20170069616A1 | 2017-03-09 | |||
| CN104538392A | 2015-04-22 | |||
| CN107731810A | 2018-02-23 | |||
| CN207719205U | 2018-08-10 | |||
| CN106158744A | 2016-11-23 | |||
| US5343053A | 1994-08-30 |
Attorney, Agent or Firm:
CHINA TRUER IP (CN)
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