Title:
LOW-DIELECTRIC MULTILAYER FILM AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2023/113128
Kind Code:
A1
Abstract:
Provided are a low-dielectric multilayer film and a method for manufacturing same, the low-dielectric multilayer film comprising: an intermediate layer; a first resin layer laminated on one surface of the intermediate layer; and a second resin layer laminated on the other surface of the intermediate layer, wherein the intermediate layer comprises: a plurality of slit-shaped voids arranged in one direction; and a plurality of inorganic hollow particles.
Inventors:
LIM SUNG WOO (KR)
KIM WON BIN (KR)
KIM WON BIN (KR)
Application Number:
PCT/KR2022/010221
Publication Date:
June 22, 2023
Filing Date:
July 13, 2022
Export Citation:
Assignee:
HANWHA SOLUTIONS CORP (KR)
International Classes:
B32B7/025; B32B27/18
Foreign References:
KR20160065627A | 2016-06-09 | |||
KR20180109936A | 2018-10-08 | |||
US20060051972A1 | 2006-03-09 | |||
KR20000068847A | 2000-11-25 |
Other References:
HEAN JU LEE, KYOUNG SUK OH, CHI KYU CHOI: "The mechanical properties of the SiOC(-H) composite thin films with a low dielectric constant", SURFACE AND COATINGS TECHNOLOGY, ELSEVIER, NL, vol. 171, no. 1-3, 1 July 2002 (2002-07-01), NL , pages 296 - 301, XP002327886, ISSN: 0257-8972, DOI: 10.1016/S0257-8972(03)00289-5
Attorney, Agent or Firm:
AJU INTERNATIONAL LAW & PATENT GROUP (KR)
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